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写出一个最简单的自适应法 

Signed-off-by: dmy@lab <dmy@lab.com>
This commit is contained in:
dmy@lab 2015-09-19 14:55:57 +08:00
parent df66a759aa
commit bff2235efe
1 changed files with 23 additions and 17 deletions
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40
SelfAdaptSimulation.m
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@ -5,10 +5,10 @@ clear
% [2]. 陈习文, 特高压直流输电线路电磁环境的研究, 2012, 北京交通大学.
%%
%设置几个参数
semi_lineDistance=20;%分裂间距
semi_lineDistance=457;%分裂间距
semi_lineCount=4;%分裂数
ConductorX=[-9,9];%导线距地高度
ConductorY=[14.5,14.5];%导线间距
ConductorX=[-14500,14500];%导线距地高度
ConductorY=[16500,16500];%导线间距
%%
%设置电压
Volt=[500;500;500;500;-500;-500;-500;-500];
@ -17,16 +17,8 @@ Volt=[500;500;500;500;-500;-500;-500;-500];
arc=2*pi/semi_lineCount;
%子导线中心到导线中心的距离
R=semi_lineDistance/2/sin(arc/2);
%每个子导线的坐标
semi_linePos=ones(semi_lineCount,1);
for I=1:semi_lineCount
semi_linePos(I)=exp(1j*((I-1)*arc+arc/2))*R;%逆时针转一个角度
end
semi_lineAPos=semi_linePos+20+1j*10;
semi_lineBPos=semi_linePos-20+1j*10;
semi_linePos=[semi_lineAPos;semi_lineBPos];
%计算模拟电荷的位置
r1=2;
r1=26;
simulationChargePos=ones(semi_lineCount,1);
for I=1:semi_lineCount
simulationChargePos(I)=exp(1j*((I-1)*arc+arc/2))*(R+r1);%逆时针转一个角度
@ -36,7 +28,7 @@ simulationChargeBPos=simulationChargePos+ConductorX(2)+1j*ConductorY(2);
simulationChargePos=[simulationChargeAPos;simulationChargeBPos];
%计算电位系数
H=diag(imag(simulationChargePos));
r=0.03/2*eye(length(imag(simulationChargePos)));%导线自几何均距
r=100*eye(length(imag(simulationChargePos)));%导线自几何均距
%导线与导线的距离
matSimulationChargePos=repmat(simulationChargePos,1,length(simulationChargePos));
conductor2conductorDistance=matSimulationChargePos-conj(matSimulationChargePos');
@ -44,11 +36,25 @@ conductor2conductorDistance=abs(conductor2conductorDistance-diag(diag(conductor2
matMirrorChargePos=conj(matSimulationChargePos);%虚部取负号
conductor2MirrorDistance=matSimulationChargePos-conj(matMirrorChargePos');
conductor2MirrorDistance=abs(conductor2MirrorDistance-diag(diag(conductor2MirrorDistance)));
eslong=1;
P1=1/pi/eslong*log(2*H./r);
eslong=8.854187817*10;
P1=1/2/pi/eslong*log(2*H./r);
P1(isnan(P1))=0;
P2=1/pi/eslong*log(conductor2MirrorDistance./conductor2conductorDistance);
P2=1/2/pi/eslong*log(conductor2MirrorDistance./conductor2conductorDistance);
P2(isnan(P2))=0;
P=P1+P2;
%求电荷
QRI=P\Volt;
QRI=P\Volt;
%以下是验证部分
%选检验导线上一个角度
vrfRelA=0.0;%vrf=verify
%计算检验点相对于子导线的位置
vrfRelPos=exp(1j*vrfRelA)*r(1);
%移动坐标，使验证的子导线中心和实际子导线中心重合。
vrfPos=exp(1j*(0+arc/2))*R+ConductorX(1)+1j*ConductorY(1)+vrfRelPos;
%计算这一点的电位系数
vrf2ConductorDistance=abs(vrfPos-simulationChargePos);
vrf2MirrorDistance=abs(vrfPos-conj(simulationChargePos));
Pij=1/2/pi/eslong*log(vrf2MirrorDistance./vrf2ConductorDistance);
%计算电压
V=Pij'*QRI;
% scatter(real([simulationChargeAPos;vrfPos]),imag([simulationChargeAPos;vrfPos]));