parent
bff2235efe
commit
798c0e1142
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@ -18,43 +18,52 @@ arc=2*pi/semi_lineCount;
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%子导线中心到导线中心的距离
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R=semi_lineDistance/2/sin(arc/2);
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%计算模拟电荷的位置
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r1=26;
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simulationChargePos=ones(semi_lineCount,1);
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for I=1:semi_lineCount
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r1=0;
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error=10000;
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for I=1:100
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simulationChargePos=ones(semi_lineCount,1);
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for I=1:semi_lineCount
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simulationChargePos(I)=exp(1j*((I-1)*arc+arc/2))*(R+r1);%逆时针转一个角度
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end
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simulationChargeAPos=simulationChargePos+ConductorX(1)+1j*ConductorY(1);
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simulationChargeBPos=simulationChargePos+ConductorX(2)+1j*ConductorY(2);
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simulationChargePos=[simulationChargeAPos;simulationChargeBPos];
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%计算电位系数
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H=diag(imag(simulationChargePos));
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r=100*eye(length(imag(simulationChargePos)));%导线自几何均距
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%导线与导线的距离
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matSimulationChargePos=repmat(simulationChargePos,1,length(simulationChargePos));
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conductor2conductorDistance=matSimulationChargePos-conj(matSimulationChargePos');
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conductor2conductorDistance=abs(conductor2conductorDistance-diag(diag(conductor2conductorDistance)));
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matMirrorChargePos=conj(matSimulationChargePos);%虚部取负号
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conductor2MirrorDistance=matSimulationChargePos-conj(matMirrorChargePos');
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conductor2MirrorDistance=abs(conductor2MirrorDistance-diag(diag(conductor2MirrorDistance)));
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eslong=8.854187817*10;
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P1=1/2/pi/eslong*log(2*H./r);
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P1(isnan(P1))=0;
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P2=1/2/pi/eslong*log(conductor2MirrorDistance./conductor2conductorDistance);
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P2(isnan(P2))=0;
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P=P1+P2;
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%求电荷
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QRI=P\Volt;
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%以下是验证部分
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if error<0.01
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break;
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end
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%选检验导线上一个角度
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vrfRelA=[0.0;2*pi/6;2*pi/3;2*pi/1];%vrf=verify
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%计算检验点相对于子导线的位置
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vrfRelPos=exp(1j*vrfRelA)*r(1);
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%移动坐标,使验证的子导线中心和实际子导线中心重合。
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vrfPos=exp(1j*(0+arc/2))*R+ConductorX(1)+1j*ConductorY(1)+vrfRelPos;
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%计算这一点的电位系数
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matVrfPos=repmat(vrfPos,1,length(simulationChargePos));
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vrf2ConductorDistance=abs(matVrfPos-repmat(conj(simulationChargePos'),length(vrfPos),1));
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vrf2MirrorDistance=abs(matVrfPos-repmat(conj(conj(simulationChargePos')),length(vrfPos),1));
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Pij=1/2/pi/eslong*log(vrf2MirrorDistance./vrf2ConductorDistance);
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%计算电压
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V=Pij*QRI;
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error=sum(abs(V-500)./500);
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r1=r1+r(1)/20;
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end
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simulationChargeAPos=simulationChargePos+ConductorX(1)+1j*ConductorY(1);
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simulationChargeBPos=simulationChargePos+ConductorX(2)+1j*ConductorY(2);
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simulationChargePos=[simulationChargeAPos;simulationChargeBPos];
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%计算电位系数
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H=diag(imag(simulationChargePos));
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r=100*eye(length(imag(simulationChargePos)));%导线自几何均距
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%导线与导线的距离
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matSimulationChargePos=repmat(simulationChargePos,1,length(simulationChargePos));
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conductor2conductorDistance=matSimulationChargePos-conj(matSimulationChargePos');
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conductor2conductorDistance=abs(conductor2conductorDistance-diag(diag(conductor2conductorDistance)));
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matMirrorChargePos=conj(matSimulationChargePos);%虚部取负号
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conductor2MirrorDistance=matSimulationChargePos-conj(matMirrorChargePos');
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conductor2MirrorDistance=abs(conductor2MirrorDistance-diag(diag(conductor2MirrorDistance)));
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eslong=8.854187817*10;
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P1=1/2/pi/eslong*log(2*H./r);
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P1(isnan(P1))=0;
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P2=1/2/pi/eslong*log(conductor2MirrorDistance./conductor2conductorDistance);
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P2(isnan(P2))=0;
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P=P1+P2;
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%求电荷
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QRI=P\Volt;
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%以下是验证部分
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%选检验导线上一个角度
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vrfRelA=0.0;%vrf=verify
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%计算检验点相对于子导线的位置
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vrfRelPos=exp(1j*vrfRelA)*r(1);
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%移动坐标,使验证的子导线中心和实际子导线中心重合。
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vrfPos=exp(1j*(0+arc/2))*R+ConductorX(1)+1j*ConductorY(1)+vrfRelPos;
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%计算这一点的电位系数
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vrf2ConductorDistance=abs(vrfPos-simulationChargePos);
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vrf2MirrorDistance=abs(vrfPos-conj(simulationChargePos));
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Pij=1/2/pi/eslong*log(vrf2MirrorDistance./vrf2ConductorDistance);
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%计算电压
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V=Pij'*QRI;
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% scatter(real([simulationChargeAPos;vrfPos]),imag([simulationChargeAPos;vrfPos]));
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