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完成了迭代部分 

Signed-off-by: dmy@lab <dmy@lab.com>
This commit is contained in:
dmy@lab 2015-09-19 15:22:49 +08:00
parent bff2235efe
commit 798c0e1142
1 changed files with 47 additions and 38 deletions
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85
SelfAdaptSimulation.m
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@ -18,43 +18,52 @@ arc=2*pi/semi_lineCount;
%子导线中心到导线中心的距离 %子导线中心到导线中心的距离
R=semi_lineDistance/2/sin(arc/2); R=semi_lineDistance/2/sin(arc/2);
%计算模拟电荷的位置 %计算模拟电荷的位置
r1=26; r1=0;
simulationChargePos=ones(semi_lineCount,1); error=10000;
for I=1:semi_lineCount for I=1:100
simulationChargePos(I)=exp(1j*((I-1)*arc+arc/2))*(R+r1);%逆时针转一个角度 simulationChargePos=ones(semi_lineCount,1);
for I=1:semi_lineCount
simulationChargePos(I)=exp(1j*((I-1)*arc+arc/2))*(R+r1);%逆时针转一个角度
end
simulationChargeAPos=simulationChargePos+ConductorX(1)+1j*ConductorY(1);
simulationChargeBPos=simulationChargePos+ConductorX(2)+1j*ConductorY(2);
simulationChargePos=[simulationChargeAPos;simulationChargeBPos];
%计算电位系数
H=diag(imag(simulationChargePos));
r=100*eye(length(imag(simulationChargePos)));%导线自几何均距
%导线与导线的距离
matSimulationChargePos=repmat(simulationChargePos,1,length(simulationChargePos));
conductor2conductorDistance=matSimulationChargePos-conj(matSimulationChargePos');
conductor2conductorDistance=abs(conductor2conductorDistance-diag(diag(conductor2conductorDistance)));
matMirrorChargePos=conj(matSimulationChargePos);%虚部取负号
conductor2MirrorDistance=matSimulationChargePos-conj(matMirrorChargePos');
conductor2MirrorDistance=abs(conductor2MirrorDistance-diag(diag(conductor2MirrorDistance)));
eslong=8.854187817*10;
P1=1/2/pi/eslong*log(2*H./r);
P1(isnan(P1))=0;
P2=1/2/pi/eslong*log(conductor2MirrorDistance./conductor2conductorDistance);
P2(isnan(P2))=0;
P=P1+P2;
%求电荷
QRI=P\Volt;
%以下是验证部分
if error<0.01
break;
end
%选检验导线上一个角度
vrfRelA=[0.0;2*pi/6;2*pi/3;2*pi/1];%vrf=verify
%计算检验点相对于子导线的位置
vrfRelPos=exp(1j*vrfRelA)*r(1);
%移动坐标，使验证的子导线中心和实际子导线中心重合。
vrfPos=exp(1j*(0+arc/2))*R+ConductorX(1)+1j*ConductorY(1)+vrfRelPos;
%计算这一点的电位系数
matVrfPos=repmat(vrfPos,1,length(simulationChargePos));
vrf2ConductorDistance=abs(matVrfPos-repmat(conj(simulationChargePos'),length(vrfPos),1));
vrf2MirrorDistance=abs(matVrfPos-repmat(conj(conj(simulationChargePos')),length(vrfPos),1));
Pij=1/2/pi/eslong*log(vrf2MirrorDistance./vrf2ConductorDistance);
%计算电压
V=Pij*QRI;
error=sum(abs(V-500)./500);
r1=r1+r(1)/20;
end end
simulationChargeAPos=simulationChargePos+ConductorX(1)+1j*ConductorY(1);
simulationChargeBPos=simulationChargePos+ConductorX(2)+1j*ConductorY(2);
simulationChargePos=[simulationChargeAPos;simulationChargeBPos];
%计算电位系数
H=diag(imag(simulationChargePos));
r=100*eye(length(imag(simulationChargePos)));%导线自几何均距
%导线与导线的距离
matSimulationChargePos=repmat(simulationChargePos,1,length(simulationChargePos));
conductor2conductorDistance=matSimulationChargePos-conj(matSimulationChargePos');
conductor2conductorDistance=abs(conductor2conductorDistance-diag(diag(conductor2conductorDistance)));
matMirrorChargePos=conj(matSimulationChargePos);%虚部取负号
conductor2MirrorDistance=matSimulationChargePos-conj(matMirrorChargePos');
conductor2MirrorDistance=abs(conductor2MirrorDistance-diag(diag(conductor2MirrorDistance)));
eslong=8.854187817*10;
P1=1/2/pi/eslong*log(2*H./r);
P1(isnan(P1))=0;
P2=1/2/pi/eslong*log(conductor2MirrorDistance./conductor2conductorDistance);
P2(isnan(P2))=0;
P=P1+P2;
%求电荷
QRI=P\Volt;
%以下是验证部分
%选检验导线上一个角度
vrfRelA=0.0;%vrf=verify
%计算检验点相对于子导线的位置
vrfRelPos=exp(1j*vrfRelA)*r(1);
%移动坐标，使验证的子导线中心和实际子导线中心重合。
vrfPos=exp(1j*(0+arc/2))*R+ConductorX(1)+1j*ConductorY(1)+vrfRelPos;
%计算这一点的电位系数
vrf2ConductorDistance=abs(vrfPos-simulationChargePos);
vrf2MirrorDistance=abs(vrfPos-conj(simulationChargePos));
Pij=1/2/pi/eslong*log(vrf2MirrorDistance./vrf2ConductorDistance);
%计算电压
V=Pij'*QRI;
% scatter(real([simulationChargeAPos;vrfPos]),imag([simulationChargeAPos;vrfPos])); % scatter(real([simulationChargeAPos;vrfPos]),imag([simulationChargeAPos;vrfPos]));