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继续排除一些bug 

Signed-off-by: dmy@lab <dmy@lab.com>
This commit is contained in:
dmy@lab 2015-09-23 19:37:52 +08:00
parent da85b45e7e
commit 0bfd04b415
1 changed files with 34 additions and 16 deletions
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50
SelfAdaptSimulation.m
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@ -5,15 +5,16 @@ clear
% [2]. 陈习文, 特高压直流输电线路电磁环境的研究, 2012, 北京交通大学.
%%
%设置几个参数
semi_lineDistance=457;%分裂间距
semi_lineDistance=257;%分裂间距
semi_lineCount=4;%分裂数
ConductorX=[-14500,14500];%导线距地高度
ConductorY=[16500,16500];%导线间距
CSM_N=10;%每一个子导线的模拟电荷数
subconductorR=30;%子导线半径
%%
%设置电压
Volt=[500;500;500;500;-500;-500;-500;-500];
Volt=[500*ones(CSM_N,1);-500*ones(CSM_N,1)];
Volt=[500*ones(CSM_N*semi_lineCount,1);-500*ones(CSM_N*semi_lineCount,1)];
%按分裂数和分裂导线间距布置单相线路导线
%用极坐标
arc=2*pi/semi_lineCount;
@ -21,21 +22,28 @@ CSM_arc=2*pi/CSM_N;
%子导线中心到导线中心的距离
R=semi_lineDistance/2/sin(arc/2);
%计算模拟电荷的位置
r1=200;
r1=2;
error=10000;
step=1/20;
maxLoop=round((R-r1)/step);
maxLoop=round((subconductorR-r1)/step);
for Loop=1:maxLoop;
simulationChargePos=ones(CSM_N,1);
for I=1:CSM_N
simulationChargePos(I)=exp(1j*((I-1)*CSM_arc+CSM_arc/2))*(R+r1);%逆时针转一个角度
simulationChargeAPos=[];
simulationChargeBPos=[];
for sC=1:semi_lineCount
for I=1:CSM_N
% simulationChargePos(I)=exp(1j*((I-1)*CSM_arc+CSM_arc/2))*(R+r1);%逆时针转一个角度
simulationChargePos(I)=exp(1j*((I-1)*CSM_arc+CSM_arc/2))*r1;%逆时针转一个角度
end
simulationChargeAPos=[simulationChargeAPos;simulationChargePos+ConductorX(1)+1j*ConductorY(1)+exp(1j*((sC-1)*arc+arc/2))*R];%移动到子导线中心
simulationChargeBPos=[simulationChargeBPos;simulationChargePos+ConductorX(2)+1j*ConductorY(2)+exp(1j*((sC-1)*arc+arc/2))*R];%移动到子导线中心
end
simulationChargeAPos=simulationChargePos+ConductorX(1)+1j*ConductorY(1);
simulationChargeBPos=simulationChargePos+ConductorX(2)+1j*ConductorY(2);
% simulationChargeAPos=simulationChargePos+ConductorX(1)+1j*ConductorY(1);
% simulationChargeBPos=simulationChargePos+ConductorX(2)+1j*ConductorY(2);
simulationChargePos=[simulationChargeAPos;simulationChargeBPos];
%计算电位系数
H=diag(imag(simulationChargePos));
r=100*eye(length(imag(simulationChargePos)));%导线自几何均距
r=subconductorR*eye(length(imag(simulationChargePos)));%导线自几何均距
%导线与导线的距离
matSimulationChargePos=repmat(simulationChargePos,1,length(simulationChargePos));
conductor2conductorDistance=matSimulationChargePos-conj(matSimulationChargePos');
@ -52,16 +60,19 @@ for Loop=1:maxLoop;
%求电荷
QRI=P\Volt;
%以下是验证部分
if error<0.0001
if error<0.01
break;
end
%选检验导线上一个角度
vrfRelA=linspace(0,2*pi)';%vrf=verify
%计算检验点相对于子导线的位置
vrfRelPos=exp(1j*vrfRelA)*R;
vrfRelPos=exp(1j*vrfRelA)*subconductorR;
%移动坐标，使验证的子导线中心和实际子导线中心重合。
vrfPos=exp(1j*(0+arc/2))*R+ConductorX(1)+1j*ConductorY(1)+vrfRelPos;
vrfPos=ConductorX(1)+1j*ConductorY(1)+vrfRelPos;
vrfPos=[];
for sC=1:semi_lineCount
vrfPos=[vrfPos;exp(1j*((sC-1)*arc+arc/2))*R+ConductorX(1)+1j*ConductorY(1)+vrfRelPos];
end
% vrfPos=ConductorX(1)+1j*ConductorY(1)+vrfRelPos;
%计算这一点的电位系数
matVrfPos=repmat(vrfPos,1,length(simulationChargePos));
vrf2ConductorDistance=abs(matVrfPos-repmat(conj(simulationChargePos'),length(vrfPos),1));
@ -69,9 +80,16 @@ for Loop=1:maxLoop;
Pij=1/2/pi/eslong*log(vrf2MirrorDistance./vrf2ConductorDistance);
%计算电压
V=Pij*QRI;
error=sum(abs(V-500)./500)/length(V);
r1=r1+Loop*step;
error=sum(abs(V-500)./500)/length(V)
r1=r1+step;
end
display('Finished.');
display(Loop);
scatter(real([simulationChargeAPos;vrfPos;ConductorX(1)]),imag([simulationChargeAPos;vrfPos;+1j*ConductorY(1)]));
scatter(real(simulationChargeAPos),imag(simulationChargeAPos),[],'r');
hold on;
scatter(real(vrfPos),imag(vrfPos),[],'k');
% scatter(real([simulationChargeAPos(1:10);]),imag([simulationChargeAPos(1:10);]),10,'red');
% hold;
% scatter(real([simulationChargeAPos(11:20);]),imag([simulationChargeAPos(11:20);]),10,'blue');
% scatter(real([simulationChargeAPos(21:30);]),imag([simulationChargeAPos(21:30);]),10,'green');
% scatter(real([simulationChargeAPos(31:40);]),imag([simulationChargeAPos(31:40);]),10,'yellow');