98 lines
4.0 KiB
Matlab
98 lines
4.0 KiB
Matlab
clc
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clear
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%% 自适应模拟电荷法
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% [1]. 任巍巍, 孙.A.宗.A., 一种较准确的分裂导线表面场强计算方法. 电网技术, 2006(04): 第92-96页.
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% [2]. 陈习文, 特高压直流输电线路电磁环境的研究, 2012, 北京交通大学.
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%%
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%设置几个参数
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semi_lineDistance=257;%分裂间距
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semi_lineCount=4;%分裂数
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ConductorX=[-14500,14500];%导线距地高度
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ConductorY=[16500,16500];%导线间距
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CSM_N=80;%每一个子导线的模拟电荷数
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subconductorR=30;%子导线半径
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%%
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%设置电压
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Volt=[500;500;500;500;-500;-500;-500;-500];
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Volt=[500*ones(CSM_N*semi_lineCount,1);-500*ones(CSM_N*semi_lineCount,1)];
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%按分裂数和分裂导线间距布置单相线路导线
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%用极坐标
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arc=2*pi/semi_lineCount;
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CSM_arc=2*pi/CSM_N;
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%子导线中心到导线中心的距离
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R=semi_lineDistance/2/sin(arc/2);
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%计算模拟电荷的位置
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r1=20;
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error=10000;
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step=1/10;
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maxLoop=round((subconductorR-r1)/step);
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for Loop=1:maxLoop;
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simulationChargePos=ones(CSM_N,1);
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simulationChargeAPos=[];
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simulationChargeBPos=[];
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for sC=1:semi_lineCount
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for I=1:CSM_N
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% simulationChargePos(I)=exp(1j*((I-1)*CSM_arc+CSM_arc/2))*(R+r1);%逆时针转一个角度
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simulationChargePos(I)=exp(1j*((I-1)*CSM_arc+CSM_arc/2))*r1;%逆时针转一个角度
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end
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simulationChargeAPos=[simulationChargeAPos;simulationChargePos+ConductorX(1)+1j*ConductorY(1)+exp(1j*((sC-1)*arc+arc/2))*R];%移动到子导线中心
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simulationChargeBPos=[simulationChargeBPos;simulationChargePos+ConductorX(2)+1j*ConductorY(2)+exp(1j*((sC-1)*arc+arc/2))*R];%移动到子导线中心
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end
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% simulationChargeAPos=simulationChargePos+ConductorX(1)+1j*ConductorY(1);
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% simulationChargeBPos=simulationChargePos+ConductorX(2)+1j*ConductorY(2);
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simulationChargePos=[simulationChargeAPos;simulationChargeBPos];
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%计算电位系数
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H=diag(imag(simulationChargePos));
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r=subconductorR*eye(length(imag(simulationChargePos)));%导线自几何均距
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%导线与导线的距离
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matSimulationChargePos=repmat(simulationChargePos,1,length(simulationChargePos));
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conductor2conductorDistance=matSimulationChargePos-conj(matSimulationChargePos');
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conductor2conductorDistance=abs(conductor2conductorDistance-diag(diag(conductor2conductorDistance)));
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matMirrorChargePos=conj(matSimulationChargePos);%虚部取负号
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conductor2MirrorDistance=matSimulationChargePos-conj(matMirrorChargePos');
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conductor2MirrorDistance=abs(conductor2MirrorDistance-diag(diag(conductor2MirrorDistance)));
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eslong=8.854187817*10;
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P1=1/2/pi/eslong*log(2*H./r);
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P1(isnan(P1))=0;
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P2=1/2/pi/eslong*log(conductor2MirrorDistance./conductor2conductorDistance);
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P2(isnan(P2))=0;
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P=P1+P2;
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%求电荷
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QRI=P\Volt;
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%以下是验证部分
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if error<0.0001
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break;
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end
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%选检验导线上一个角度
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vrfRelA=linspace(0,2*pi,200)';%vrf=verify
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%计算检验点相对于子导线的位置
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vrfRelPos=exp(1j*vrfRelA)*subconductorR;
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%移动坐标，使验证的子导线中心和实际子导线中心重合。
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vrfPos=[];
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for sC=1:semi_lineCount
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vrfPos=[vrfPos;exp(1j*((sC-1)*arc+arc/2))*R+ConductorX(1)+1j*ConductorY(1)+vrfRelPos];
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end
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% vrfPos=ConductorX(1)+1j*ConductorY(1)+vrfRelPos;
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%计算这一点的电位系数
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matVrfPos=repmat(vrfPos,1,length(simulationChargePos));
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vrf2ConductorDistance=abs(matVrfPos-repmat(conj(simulationChargePos'),length(vrfPos),1));
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vrf2MirrorDistance=abs(matVrfPos-repmat(conj(conj(simulationChargePos')),length(vrfPos),1));
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Pij=1/2/pi/eslong*log(vrf2MirrorDistance./vrf2ConductorDistance);
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%计算电压
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V=Pij*QRI;
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error=sum(abs(V-500)./500)/length(V);
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r1=r1+step;
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end
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display('Finished.');
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if Loop<maxLoop
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display('Converged.');
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end
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display(Loop);
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scatter(real(simulationChargeAPos),imag(simulationChargeAPos),[],'r');
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hold on;
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scatter(real(vrfPos),imag(vrfPos),[],'k');
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% scatter(real([simulationChargeAPos(1:10);]),imag([simulationChargeAPos(1:10);]),10,'red');
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% hold;
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% scatter(real([simulationChargeAPos(11:20);]),imag([simulationChargeAPos(11:20);]),10,'blue');
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% scatter(real([simulationChargeAPos(21:30);]),imag([simulationChargeAPos(21:30);]),10,'green');
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% scatter(real([simulationChargeAPos(31:40);]),imag([simulationChargeAPos(31:40);]),10,'yellow'); |