151 lines
6.4 KiB
Matlab
151 lines
6.4 KiB
Matlab
clc
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clear
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%% 自适应模拟电荷法
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% [1]. 任巍巍, 孙.A.宗.A., 一种较准确的分裂导线表面场强计算方法. 电网技术, 2006(04): 第92-96页.
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% [2]. 陈习文, 特高压直流输电线路电磁环境的研究, 2012, 北京交通大学.
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% 采用文献的结果： 蒋兴良, 胡.A.舒.A., Analysis of Conductors＇ Surface Electric Field of UHVDC Transmission Lines Based on Optimized Charge Simulation Method. 高电压技术, 2008(12): p. 2547-2551.
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%%
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%设置几个参数
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semi_lineDistance=450;%分裂间距
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semi_lineCount=6;%分裂数
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ConductorX=[-11000,11000];%导线间距
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ConductorY=[22000,22000,];%导线距地高度
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GroundX=[-11000,11000];%地线坐标
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GroundY=[30000,30000];
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CSM_N=50;%每一个子导线的模拟电荷数
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subconductorR=16.8;%子导线半径
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phaseN=2;%相数，单回三相
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groundN=2;%地线数量
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%%
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%设置电压
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% Volt_=[1100/sqrt(3);1100/sqrt(3)*exp(1j*4/3*pi);1100/sqrt(3)*exp(1j*2/3*pi);];
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Volt_=[800;-800;0;0];
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Volt=[];
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for vLoop=1:phaseN
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Volt=[Volt;Volt_(vLoop)*ones(CSM_N*semi_lineCount,1);];
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end
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for vLoop=1:groundN
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Volt=[Volt;Volt_(vLoop+phaseN)*ones(CSM_N,1);];
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end
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%按分裂数和分裂导线间距布置单相线路导线
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%用极坐标
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arc=2*pi/semi_lineCount;
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CSM_arc=2*pi/CSM_N;
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%子导线中心到导线中心的距离
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R=semi_lineDistance/2/sin(arc/2);
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%计算模拟电荷的位置
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r1=8;
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error=10000;
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step=1/10;
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maxLoop=round((subconductorR-r1)/step);
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for Loop=1:maxLoop;
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simulationChargePos=ones(CSM_N,1);
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simulationChargeABCPos=[];
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matchPos=[];
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for I=1:CSM_N
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simulationChargePos(I)=exp(1j*((I-1)*CSM_arc+CSM_arc/2))*r1;%逆时针转一个角度
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end
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for phaseLoop=1:phaseN
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for sC=1:semi_lineCount
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simulationChargeABCPos=[simulationChargeABCPos;simulationChargePos+ConductorX(phaseLoop)+1j*ConductorY(phaseLoop)+exp(1j*((sC-1)*arc+arc/2))*R];%移动到子导线中心
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%同时计算匹配点的位置
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matchPos=[matchPos;simulationChargePos/r1*subconductorR+ConductorX(phaseLoop)+1j*ConductorY(phaseLoop)+exp(1j*((sC-1)*arc+arc/2))*R];
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end
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end
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%地线的
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for groundLoop=1:groundN
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%simulationChargeABCPos=[simulationChargeABCPos;simulationChargePos+GroundX(phaseLoop)+1j*GroundY(phaseLoop)];%移动到子导线中心
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simulationChargeABCPos=[simulationChargeABCPos;simulationChargePos+GroundX(groundLoop)+1j*GroundY(groundLoop)];%移动到子导线中心
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%同时计算匹配点的位置
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matchPos=[matchPos;simulationChargePos/r1*subconductorR+GroundX(groundLoop)+1j*GroundY(groundLoop)];
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% matchPos=[matchPos;GroundX(groundLoop)+1j*GroundY(groundLoop)];
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end
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% simulationChargeAPos=simulationChargePos+ConductorX(1)+1j*ConductorY(1);
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% simulationChargeBPos=simulationChargePos+ConductorX(2)+1j*ConductorY(2);
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% simulationChargePos=simulationChargeABCPos;
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%计算电位系数
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% H=diag(imag(simulationChargeABCPos));
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% r=subconductorR*eye(length(imag(simulationChargeABCPos)));%导线自几何均距
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%导线与导线的距离
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matSimulationChargePos=repmat(simulationChargeABCPos,1,length(simulationChargeABCPos));
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matMatchPos=repmat(conj(matchPos'),length(simulationChargeABCPos),1);
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CMS2MatchPointDistance=abs(matSimulationChargePos-matMatchPos);
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% conductor2conductorDistance=abs(conductor2conductorDistance-diag(diag(conductor2conductorDistance)));
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matMirrorChargePos=conj(matSimulationChargePos);%虚部取负号
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mirrorCharge2MatchPointDistance=abs(matMirrorChargePos-matMatchPos);
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% conductor2MirrorDistance=abs(conductor2MirrorDistance-diag(diag(conductor2MirrorDistance)));
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eslong=8.854187817*10^-12*1000;
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eslong=1;
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% P1=1/2/pi/eslong*log(2*H./r);
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% P1(isnan(P1))=0;
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P2=1/2/pi/eslong*log(mirrorCharge2MatchPointDistance./CMS2MatchPointDistance);
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% P2(isnan(P2))=0;
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% P=P1+P2;
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P=P2;
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%求电荷
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QRI=P\Volt;
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%选检验导线上一个角度
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vrfRelA=linspace(0,2*pi,200)';%vrf=verify
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%计算检验点相对于子导线的位置
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vrfRelPos=exp(1j*vrfRelA)*subconductorR;
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%移动坐标，使验证的子导线中心和实际子导线中心重合。
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vrfPos=[];
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for phaseLoop=1:phaseN
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for sC=1:semi_lineCount
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vrfPos=[vrfPos;exp(1j*((sC-1)*arc+arc/2))*R+ConductorX(phaseLoop)+1j*ConductorY(phaseLoop)+vrfRelPos];
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end
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end
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for groundLoop=1:groundN
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vrfPos=[vrfPos;GroundX(groundLoop)+1j*GroundY(groundLoop)+vrfRelPos];
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end
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%计算这一点的电位系数
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matVrfPos=repmat(vrfPos,1,length(simulationChargeABCPos));
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vrf2ConductorDistance=abs(matVrfPos-repmat(conj(simulationChargeABCPos'),length(vrfPos),1));
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vrf2MirrorDistance=abs(matVrfPos-repmat(conj(conj(simulationChargeABCPos')),length(vrfPos),1));
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Pij=1/2/pi/eslong*log(vrf2MirrorDistance./vrf2ConductorDistance);
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%计算电压
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V=Pij*QRI;
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Vvalidation=[];
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for phaseLoop=1:phaseN
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Vvalidation=[Vvalidation;Volt_(phaseLoop)*ones(semi_lineCount*200,1);];
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end
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for groundLoop=1:groundN
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Vvalidation=[Vvalidation;Volt_(groundLoop+phaseN)*ones(200,1);];
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end
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error=abs((V-Vvalidation)./Vvalidation);
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error=[error(1:phaseN*semi_lineCount*200);abs(V(phaseN*semi_lineCount*200+1:end)-Vvalidation(phaseN*semi_lineCount*200+1:end))];
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% error(isinf(error))=0;
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error=sum(error)/length(Vvalidation)
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%以下是验证部分
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if error<0.01
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break;
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end
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r1=r1+1*step;
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end
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display('Finished.');
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if Loop<maxLoop
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display('Converged.');
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end
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display(Loop);
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%计算场强
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ABCy=imag(repmat(simulationChargeABCPos,1,length(vrfPos)));
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ABCx=real(repmat(simulationChargeABCPos,1,length(vrfPos)));
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y=imag(conj(matVrfPos'));
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x=real(conj(matVrfPos'));
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ERy=sum( ( (ABCy-y)./( (ABCy-y).^2+(ABCx-x).^2 )-(ABCy+y)./( (ABCy+y).^2+(ABCx-x).^2 ) ).*repmat(real(QRI),1,length(vrfPos))./2/pi/eslong,1 );
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EIy=sum( ( (ABCy-y)./( (ABCy-y).^2+(ABCx-x).^2 )-(ABCy+y)./( (ABCy+y).^2+(ABCx-x).^2 ) ).*repmat(imag(QRI),1,length(vrfPos))./2/pi/eslong,1 );
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ERx=sum( ( (ABCx-x)./( (ABCy-y).^2+(ABCx-x).^2 )-(ABCx-x)./( (ABCy+y).^2+(ABCx-x).^2 ) ).*repmat(real(QRI),1,length(vrfPos))./2/pi/eslong,1 );
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EIx=sum( ( (ABCx-x)./( (ABCy-y).^2+(ABCx-x).^2 )-(ABCx-x)./( (ABCy+y).^2+(ABCx-x).^2 ) ).*repmat(imag(QRI),1,length(vrfPos))./2/pi/eslong,1 );
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E2=sqrt(ERy.^2+EIy.^2+ERx.^2+EIx.^2+((ERy.^2-EIy.^2+ERx.^2-EIx.^2).^2+4*(ERy.*EIy+ERx.*EIx).^2).^.5);
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E3=sqrt(ERy.^2+EIy.^2+ERx.^2+EIx.^2);
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Emat=1/pi/2./eslong.*repmat(conj(QRI'),length(vrfPos),1)./(vrf2ConductorDistance.^2).*(matVrfPos-repmat(conj(simulationChargeABCPos'),length(vrfPos),1))./vrf2ConductorDistance;
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E=sum(Emat,2);
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max(sqrt(2)*abs(E));
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scatter(real(simulationChargeABCPos(1:length(simulationChargeABCPos)/1)),imag(simulationChargeABCPos(1:length(simulationChargeABCPos)/1)),[],'r');
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axis equal
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hold on;
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scatter(real(vrfPos),imag(vrfPos),[],'k'); |