From df66a759aa113417616fe72cec6fb1f72a9df8d5 Mon Sep 17 00:00:00 2001
From: "dmy@lab" <dmy@lab.com>
Date: Fri, 18 Sep 2015 16:49:55 +0800
Subject: [PATCH] =?UTF-8?q?=E5=86=99=E8=87=AA=E9=80=82=E5=BA=94=E6=A8=A1?=
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Signed-off-by: dmy@lab <dmy@lab.com>
---
 SelfAdaptSimulation.m | 54 +++++++++++++++++++++++++++++++++++++++++++
 1 file changed, 54 insertions(+)
 create mode 100644 SelfAdaptSimulation.m

diff --git a/SelfAdaptSimulation.m b/SelfAdaptSimulation.m
new file mode 100644
index 0000000..3489d36
--- /dev/null
+++ b/SelfAdaptSimulation.m
@@ -0,0 +1,54 @@
+clc
+clear
+%% 自适应模拟电荷法
+% [1].	任巍巍, 孙.A.宗.A., 一种较准确的分裂导线表面场强计算方法. 电网技术, 2006(04): 第92-96页.
+% [2].	陈习文, 特高压直流输电线路电磁环境的研究, 2012, 北京交通大学.
+%%
+%设置几个参数
+semi_lineDistance=20;%分裂间距
+semi_lineCount=4;%分裂数
+ConductorX=[-9,9];%导线距地高度
+ConductorY=[14.5,14.5];%导线间距
+%%
+%设置电压
+Volt=[500;500;500;500;-500;-500;-500;-500];
+%按分裂数和分裂导线间距布置单相线路导线
+%用极坐标
+arc=2*pi/semi_lineCount;
+%子导线中心到导线中心的距离
+R=semi_lineDistance/2/sin(arc/2);
+%每个子导线的坐标
+semi_linePos=ones(semi_lineCount,1);
+for I=1:semi_lineCount
+    semi_linePos(I)=exp(1j*((I-1)*arc+arc/2))*R;%逆时针转一个角度
+end
+semi_lineAPos=semi_linePos+20+1j*10;
+semi_lineBPos=semi_linePos-20+1j*10;
+semi_linePos=[semi_lineAPos;semi_lineBPos];
+%计算模拟电荷的位置
+r1=2;
+simulationChargePos=ones(semi_lineCount,1);
+for I=1:semi_lineCount
+    simulationChargePos(I)=exp(1j*((I-1)*arc+arc/2))*(R+r1);%逆时针转一个角度
+end
+simulationChargeAPos=simulationChargePos+ConductorX(1)+1j*ConductorY(1);
+simulationChargeBPos=simulationChargePos+ConductorX(2)+1j*ConductorY(2);
+simulationChargePos=[simulationChargeAPos;simulationChargeBPos];
+%计算电位系数
+H=diag(imag(simulationChargePos));
+r=0.03/2*eye(length(imag(simulationChargePos)));%导线自几何均距
+%导线与导线的距离
+matSimulationChargePos=repmat(simulationChargePos,1,length(simulationChargePos));
+conductor2conductorDistance=matSimulationChargePos-conj(matSimulationChargePos');
+conductor2conductorDistance=abs(conductor2conductorDistance-diag(diag(conductor2conductorDistance)));
+matMirrorChargePos=conj(matSimulationChargePos);%虚部取负号
+conductor2MirrorDistance=matSimulationChargePos-conj(matMirrorChargePos');
+conductor2MirrorDistance=abs(conductor2MirrorDistance-diag(diag(conductor2MirrorDistance)));
+eslong=1;
+P1=1/pi/eslong*log(2*H./r);
+P1(isnan(P1))=0;
+P2=1/pi/eslong*log(conductor2MirrorDistance./conductor2conductorDistance);
+P2(isnan(P2))=0;
+P=P1+P2;
+%求电荷
+QRI=P\Volt;
\ No newline at end of file